Buffered oxide etch 6:1 (BOE 6:1) semiconductor grade

Supplier: Transene
Danger

000BOE61-QT 000BOE61-GAL
76541-078EA 44.84 USD
76541-078 76540-943
Buffered oxide etch 6:1 (BOE 6:1) semiconductor grade
Buffered oxide etch

Buffered Oxide Etchant 6:1 is a moderate-speed etchant for oxide films. 6:1 ratio of ammonium fluoride: HF.

Boiling Pt: 103-105 °C
Melting Pt: -35 °C
Density: 1.11-1.12 g/cc
UN: 2817
ADR: 8, 6.1,II

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Specification Test Results

Color ≤ 10 APHA
Aluminum ≤ 3.1 ppb
Antimony ≤ 10 ppb
Arsenic ≤ 2 ppb
Barium ≤ 0.5 ppb
Beryllium ≤ 1 ppb
Bismuth ≤ 1 ppb
Boron ≤ 5 ppb
Cadmium ≤ 1 ppb
Calcium ≤ 3 ppb
Chloride ≤ 2 ppm
Chromium ≤ 2 ppb
Cobalt ≤ 2 ppb
Copper ≤ 5 ppb
Gallium ≤ 2 ppb
Germanium ≤ 2 ppb
Gold ≤ 2 ppb
Iron ≤ 5 ppb
Lead ≤ 2 ppb
Lithium ≤ 1 ppb
Magnesium ≤ 1 ppb
Manganese ≤ 2 ppb
Molybdeum ≤ 1 ppb
Nickel ≤ 1 ppb
Nitrate ≤ 3 ppm
Phosphate ≤ 0.4 ppm
Potassium ≤ 2 ppb
Silver ≤ 1 ppb
Sodium ≤ 5 ppb
Strontium ≤ 1 ppb
Sulfate ≤ 0.5 ppm
Thallium ≤ 2 ppb
Tin ≤ 2 ppb
Titanium ≤ 5 ppb
Vanadium ≤ 2 ppb
Zinc ≤ 2 ppb
Zirconium ≤ 2 ppb
Particle >0.5 ≤ 100 Particle/ml
Particle >1.0 ≤ 15 Particle/ml

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